US 10,094,792 B2 · Method for analysis of thermal resistance

Abstract

The present invention provides a method for analysis of thermal structures, not only to reduce analysis errors caused by temperature measurement errors, but also to get the thermal resistance of contact interfaces and the internal resistance distribution of heat conduction components of a DUT, by establishing a heat conduction model of the DUT, solving and analyzing a mathematic heat conduction model on the basis of temperature data of a heat source and thermal model parameters, thus realizing the accurate quantitative analysis of thermal resistance structure of the DUT, comprehensively evaluating the thermal contact conditions inside the whole DUT, and providing an important basis for improving the heat dissipation design of LED and other devices. The analysis method features in simplicity, high accuracy, high speed, wide application range, etc.

Drawings

Claims8

Dependent claims

A method for analysis of thermal resistance, characterized in that a device-under-test (DUT) includes heat sources and heat conduction components, and thermal resistance of contact interfaces between the heat conduction components of the DUT is analyzed by using temperature change data of the heat source and thermal model parameters of the heat conduction components to obtain the thermal resistance of contact interfaces and the internal resistance distribution of heat conduction components of the DUT for allowing a user to modify the material characteristic of each of the heat conduction components of the DUT so as to improve the heat dissipation design thereof, the method comprising the following steps of:

(a) applying power to the heat source and then measuring the change in temperature of the heat source with time;
(b) establishing a heat conduction module of the DUT to determine function relationships between temperature and time of the heat source and between thermal resistance and capacitance along a heat flow path, and then obtaining the distribution data of the thermal resistance and capacitance of the DUT on the heat flow path through solving the function with the temperature change data of the DUT in step (a);
(c) calculating thermal model parameters of each heat conduction component, including values of the thermal resistance and capacitance, according to the direction of the heat flow, and the size and fixed thermal characteristic parameters of each heat conduction component;
and
(d) analyzing and comparing the distribution data of the thermal resistance and capacitance on the heat flow path of the DUT and thermal model parameters of the heat conduction components to obtain the thermal resistance of the contact interfaces between the heat conduction components,
wherein data change in cumulative thermal capacitance with cumulative thermal resistance at each point from heat source to heat flow path, namely thermal resistance structure function including integral and differential structure function, can be obtained according to distribution data of thermal resistance and capacitance on said heat flow path.

3 more elements

A method for analysis of thermal resistance characterized in that a device-under-test (DUT) comprises the heat source and more than one heat conduction components;

the distribution data of the thermal resistance and capacitance along the heat flow path of the DUT are obtained through establishing a heat conduction module of the DUT, employing the thermal model parameters of each heat conduction component as limit conditions and combining the temperature change in the heat source so as to obtain the thermal resistance of contact interfaces and the internal resistance distribution of heat conduction components of the DUT for allowing a user to modify the material characteristic of each of the heat conduction components of the DUT so as to improve the heat dissipation design thereof, the method comprising the following steps of:
(a) applying power to the heat source, and then measuring temperature change in heat source with time;
(b) calculating thermal model parameters of each heat conduction component, including values of thermal resistance and capacitance, according to the direction of the heat flow, the size and fixed thermal parameters of each heat conduction component;
(c) establishing a heat conduction model of the DUT, and determining function relationships between temperature and time of the heat source and between thermal resistance and capacitance of each infinitesimal;
and
(d) solving the function relationships in step (c) through employing the calculated thermal model parameters of each heat conduction component as the limit conditions of the heat conduction model and combining the temperature change in the heat source with time to obtain the distribution data of the thermal capacitance and resistance along the heat flow path of the DUT, and to obtain the thermal resistance of the contact interface between the heat conduction components directly,
wherein data change in cumulative thermal capacitance with cumulative thermal resistance at each point from heat source to heat flow path, namely thermal resistance structure function including integral and differential structure function, can be obtained according to distribution data of thermal resistance and capacitance on said heat flow path.

4 more elements

Dependencies are inferred from the claim text.

Description9,019 words

Summary5,775 words

#1. Technical Field

#The present invention relates to the test filed of thermal properties, and particularly to a method for analysis of thermal resistance.

#2. Description of Related Art

Brief description of the drawings13 figures

#FIG. 1 is a diagram of LED composition;

#FIG. 2 is a heat conduction diagram of LED;

#FIG. 3 is a CAUER RC thermal model;

Detailed description3,117 words

#1—heat conduction component; 1-1—chip; 1-2—metal substrate; 1-3—aluminium substrate; 2—contact interface; 2-1—the first contact interface;

#2-2—the second contact interface; 3—heat flow input interface, 4—heat flow output interface, 5—heat flow path, 6—heat source.

#As shown in FIG. 1, in this embodiment, the DUT is an LED, consisting of a PN junction, a chip (1-1), a first contact interface (2-1) and an aluminum substrate (1-3). As the heat source 6 of LED, the PN junction is located in the chip (1-1). The first contact interface (2-1) and second contact interface (2-2) are connecting layer of different materials and shapes respectively.

Facts

Application

14/775,127Filed 24 Dec 2013

Priority

CN 2013 1 035164313 Aug 2013

Published

US 2016/0041112 A111 Feb 2016

Granted

9 Oct 2018

Term ends

22 Sep 2034

Estimated · how

20 years from earliest known nonprovisional domestic filing plus recorded patent term adjustment, including 272 days of adjustment. Maintenance-fee lapses, terminal disclaimers and statutory extensions have not been checked. The continuity chain may be incomplete; this is not an enforceability determination.

Classification3 codes

G01N 25/18
Investigating or analyzing materials by the use of thermal means: by investigating thermal conductivity
G01N 25/20
Investigating or analyzing materials by the use of thermal means: by investigating the development of heat, i.e. calorimetry, e.g. by measuring…
G01N
Investigating or analysing materials by determining their chemical or physical properties

Method for analysis of thermal resistance

Life of this patent

Method for analysis of thermal resistance

Life of this patent

Life of this patent

Abstract

Drawings

Drawings

Claims8

Description9,019 words

Drawings

Classification3 codes

Life of this patent

Description9,019 words