Method of manufacturing a gallium nitride substrate
AssigneeSamsung Electronics Co., Ltd.
InventorsMi-Hyun Kim, Sam-Mook Kang, Jun-Youn Kim, Young-Jo Tak, Young-Soo Park
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Abstract
In a method of manufacturing a GaN substrate, a capping layer may be formed on a first surface of a silicon substrate. A buffer layer may be formed on a second surface of the silicon substrate. The second surface may be opposite the first surface. A GaN substrate may be formed on the buffer layer by performing a hydride vapor phase epitaxy (HVPE) process. The capping layer and the silicon substrate may be removed.
Claims20
A method of manufacturing a gallium nitride (GaN) substrate, the method comprising:
- forming a capping layer on a first surface of a silicon substrate;
- forming a buffer layer on a second surface of the silicon substrate, the second surface being opposite the first surface;
- forming a GaN substrate on the buffer layer by performing a hydride vapor phase epitaxy (HVPE) process;
- and
- removing the capping layer and the silicon substrate.
A method of manufacturing a GaN substrate, the method comprising:
- forming a capping layer on a first surface of a silicon substrate;
- forming a GaN substrate on a second surface of the silicon substrate, the second surface being opposite the first surface;
- and
- dry etching the capping layer and the silicon substrate.
A method of manufacturing a gallium nitride (GaN) substrate, the method comprising:
- forming a nitride blocking layer covering a first surface of a silicon substrate;
- forming a GaN substrate on a second surface of the silicon substrate, the second surface being opposite the first surface;
- and
- removing the nitride blocking layer together with the silicon substrate.
Dependencies are inferred from the claim text.