Electrodeposited nano-twins copper layer and method of fabricating the same

A method for preparing a nano-twins copper metal layer, comprising:

• (A) providing an electrodepositing device, wherein the electrodepositing device comprises an anode, a cathode, a plating solution, and an electrical power supply source, and the electrical power supply source is connected to the anode and the cathode;
• and
• (B) using the electrical power supply source to provide an electrical power to perform electrodeposition at a surface of the cathode to grow a nano-twins copper metal layer;
• wherein over 50% of a volume of the nano-twins copper metal layer comprises a plurality of crystal grains, each crystal grain is connected with one another, each crystal grain is formed as a result of a plurality of nano-twins stacking in a direction of a [111] crystal axis, and an angle included between neighboring crystal grains is 0° to 20°;
• wherein the plating solution comprises a copper-based salt compound, an acid, and a chloride anion supply source;
• and
• wherein the method is used in a preparation of through silicon via (TSV), interconnect of a semiconductor chip, pin through hole of a packaging substrate, metal wire, or substrate circuit.