Methods and apparatus for chemical vapor deposition of a cobalt layer
AssigneeApplied Materials, Inc.
InventorsSang Ho Yu, Mei Chang
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Abstract
Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a method of depositing a cobalt layer atop a substrate includes: (a) providing a substrate to a substrate support that is rotatable between two processing positions; (b) exposing the substrate to a cobalt containing precursor at a first processing position to deposit a cobalt layer atop the substrate; (c) rotating the substrate having the deposited cobalt layer to a second processing position; and (d) treating the substrate at the second processing position to remove contaminants from the cobalt layer.
Claims17
A method of depositing a cobalt layer atop a substrate, comprising:
- (a) providing a substrate to a substrate support that is rotatable about a center of the substrate support between two static processing positions with gas injection and disposed within a common processing volume of a process chamber;
- (b) exposing the substrate to a cobalt containing precursor at a first static processing position to deposit a cobalt layer atop the substrate;
- (c) rotating the substrate having the deposited cobalt layer about the center of the substrate support to a second static processing position;
- and
- (d) treating the substrate at the second static processing position to remove contaminants from the cobalt layer while providing a flow of an inert gas to the second static processing position to inhibit the cobalt containing precursor gas from straying from the first static processing position into the second static processing position.
A non-transitory computer readable medium having instructions stored thereon that, when executed, cause a method of depositing a cobalt layer atop a substrate, the method comprising:
- (a) providing a substrate to a substrate support that is rotatable about a center of the substrate support between two static processing positions with gas injection and disposed within a common processing volume of a process chamber;
- (b) exposing the substrate to a cobalt containing precursor at a first static processing position to deposit a cobalt layer atop the substrate;
- (c) rotating the substrate about the center of the substrate support to a second static processing position;
- and
- (d) treating the substrate at the second static processing position to remove contaminants from the cobalt layer while providing a flow of an inert gas to the second static processing position to inhibit the cobalt containing precursor gas from straying from the first static processing position into the second static processing position.
Dependencies are inferred from the claim text.