Interconnect structure and method of forming same

A method of manufacturing a semiconductor device, the method comprising:

• providing a first semiconductor wafer bonded to a second semiconductor wafer;
• forming a first opening through a semiconductor substrate of the first semiconductor wafer;
• forming a second opening through the semiconductor substrate;
• lining the first opening and the second opening with a continuous material;
• forming a third opening through a first portion of the continuous material, the first portion being located within the first opening, the third opening extending to expose a conductive feature within the first semiconductor wafer;
• and
• forming a fourth opening through a second portion of the continuous material, the second portion being located within the second opening, the fourth opening extending to expose a conductive feature within the second semiconductor wafer.

A method of manufacturing a semiconductor device, the method comprising:

• etching a first semiconductor wafer to form a first opening and a second opening through a semiconductor substrate of the first semiconductor wafer;
• depositing a dielectric material in physical contact with both a first sidewall of the first opening and a second sidewall of the second opening, wherein the dielectric material is continuous between the first sidewall and the second sidewall;
• etching the first semiconductor wafer through the dielectric material to form a third opening through the first opening and a fourth opening through the second opening, the etching the first semiconductor wafer stopping on a conductive etch stop layer within the first semiconductor wafer exposed by the third opening and stopping on a conductive layer within a second semiconductor wafer bonded to the first semiconductor wafer and exposed by the fourth opening;
• and
• simultaneously filling the first opening, the second opening, the third opening, and the fourth opening with a conductive material.