Flexible, hermetic electrical interconnect for electronic and optoelectronic devices for in vivo use

A method of fabricating a hermetic electric interconnect for an optoelectronic device, the method comprising the steps of:

• (a) depositing a bottom metal layer on a substrate;
• (b) depositing a bottom insulating layer on the bottom metal layer to insulate the bottom metal layer;
• and (bs) patterning the bottom insulating layer to form a bottom seal ring trench;
• (c) (c1) depositing an interconnect metal layer on the bottom insulating layer, (c1s) to fill the bottom seal ring trench to form a bottom sealing ring;
• and (c2) patterning the interconnect metal layer to form electrical connections between contact pads, and (c2s) to form a middle sealing ring around the electrical connections;
• (d) (d1) depositing a top insulating layer on the interconnect metal layer to insulate the interconnect metal layer, and (d1s) to separate the middle sealing ring from the interconnect metal layer;
• and (d2) patterning the top insulating layer to form feedthrough holes coupled with the contact pads, and (d2s) to form a top sealing ring trench coupled with the middle sealing ring;
• (e) (e1) depositing a top metal layer on the top insulating layer to start forming contacts by filling the feedthrough holes, and (e1s) to start forming a top sealing ring by filling the top seal ring trench;
• and (e2) patterning the top metal layer to complete forming contacts through the feedthrough holes, to form a separate barrier layer, and (e2s) to complete forming the top sealing ring, coupled with the middle sealing ring;
• and
• (f) seating contact pads of a first electronic module and a second electronic module into the contacts, and (fs) seating a module sealing ring into the top sealing ring.