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US 10,090,639 B2Granted
Laser diode enhancement device
AssigneeLuminit LLC
InventorsAlkan Gulses, Russell Kurtz
Life of this patent
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Abstract
The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InGaAs. The CGH is composed of AlGaAs.
Claims5
A Vertical External Cavity Surface Emitting Laser device comprising:
- A laser source with a cavity;
- A DBR mirror on a substrate within the cavity;
- The DBR mirror comprising a plurality of first layers and creating a mode;
- Diffractive elements consisting of a plurality of interior CGHs at an end of the cavity;
- Said CGHs each having a plurality of cascaded second layers with a buffer layer between each layer;
- With the diffractive elements shaping the mode.
3 more elements
Dependencies are inferred from the claim text.