Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Yu Chen, Tien-Chung Yang, An-Jhih Su, Hsien-Wei Chen
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Abstract
A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device includes a first set of through vias between and connecting a top package and a redistribution layer (RDL), the first set of through vias in physical contact with a molding compound and separated from a die. The semiconductor device also includes a first interconnect structure between and connecting the top package and the RDL, the first interconnect structure separated from the die and from the first set of through vias by the molding compound. The first interconnect structure includes a second set of through vias and at least one integrated passive device.
Claims20
A method comprising:
- forming a first Integrated Passive Device Structure (IPDS), comprising:
- forming an integrated passive device on a first substrate;
- and
- forming a first through substrate via (TSV) in the first substrate;
- forming a first via on a second substrate;
- disposing a first semiconductor device and the first IPDS on the second substrate, wherein the first semiconductor device, the first IPDS, and the first via are separated from each other;
- encapsulating the first semiconductor device, the first IPDS, and the first via with a first encapsulant, wherein the first via extends from a first side of the encapsulant to a second side of the encapsulant;
- and
- forming a first redistribution layer (RDL) over the first side of the encapsulant, wherein the first RDL is electrically connected to the first semiconductor device, the first IPDS, and the first via.
A method comprising:
- attaching a die to a first side of a first substrate;
- attaching a plurality of interconnect structures to the first side of the first substrate, each interconnect structure comprising:
- a second substrate;
- at least one integrated passive device;
- and
- at least one conductive element extending from a first side of the second substrate to a second side of the second substrate;
- forming a plurality of through substrate vias (TSVs) on the first side of the first substrate;
- forming a molding compound surrounding the die, the plurality of interconnect structures, and the plurality of TSVs, wherein the die, each interconnect structure of the plurality of interconnect structures, and each TSV of the plurality of TSVs are separated by the molding compound;
- and
- forming a first redistribution layer (RDL) over the die, the plurality of interconnect structures, and the plurality of TSVs.
A method of manufacturing a semiconductor device, the method comprising:
- forming a set of vias on a redistribution layer (RDL);
- placing a die on the RDL separated from the set of vias;
- and
- placing a first interconnect structure on the RDL, the first interconnect structure separated from the die and the set of vias, the first interconnect structure comprising:
- a substrate;
- at least one through conductive element extending from one side of the substrate to a second side of the substrate;
- and
- at least one integrated passive device;
- encapsulating the set of vias, the die, and the first interconnect structure in an encapsulant, wherein the encapsulant is in physical contact with the set of vias, the die, and the first interconnect structure;
- and
- planarizing the set of vias, the die, the encapsulant, and the first interconnect structure.
Dependencies are inferred from the claim text.