Methods of predicting unity gain frequency with direct current and/or low frequency parameters

A method of predicting a unity gain frequency (fT) in a metal-oxide-semiconductor field-effect transistor (MOSFET) device in a manufacturing line, the method comprising:

• measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (Vd1);
• extracting a transconductance (Gm) from the first set of in-line DC parameters as a function of a gate-voltage (Vg) and the first drain-voltage (Vd1);
• measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (Vd2), wherein the second drain voltage (Vd2) is distinct from the first drain-voltage (Vd1);
• extracting a total gate capacitance (Cgg) from the second set of in-line DC parameters as a function of the gate-voltage (Vg);
• and
• predicting the unity gain frequency (fT) of the MOSFET based upon the extracted transconductance (Gm) and the extracted total gate capacitance (Cgg),
• wherein the unity gain frequency (fT) is calculated according to the equation:
• f
• T
• =
• G
• m
• 2
• *
• π
• *
• C
• gg
• .