Ion concentration sensor
AssigneesSharp Kabushiki Kaisha, National University Corporation Toyohashi Universi
InventorsKenichi Nagai, Satoshi Saitoh, Kazuaki Sawada
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Abstract
Provided is an ion sensor including a supporting substrate, a plurality of cells, a silicon substrate, a plurality of transistors, and an analog-digital conversion circuit. The plurality of cells, the plurality of transistors, and the analog-digital conversion circuit are provided above the supporting substrate. Each of the plurality of transistors has a corresponding gate provided on a first surface of the silicon substrate. The analog-digital conversion circuit is provided on the silicon substrate. The ion-sensing surface is provided on a second surface of the silicon substrate. The second surface is opposite to the first surface.
Claims6
An ion concentration sensor, comprising:
- a supporting substrate;
- a plurality of sensing sections having a sensing surface with which a test object is to be brought into contact, each of the plurality of sensing sections being sensitive to ions of the test object;
- a semiconductor layer provided between the supporting substrate and the plurality of sensing sections;
- a plurality of transistors which are configured to read out and transfer respective analog signals which vary in accordance with amounts of ions sensed by the respective plurality of sensing sections;
- and
- an analog to digital conversion circuit which converts, into respective digital signals, the analog signals transferred from the respective plurality of transistors,
- the plurality of sensing sections, the plurality of transistors, and the analog to digital conversion circuit being provided above the supporting substrate,
- the plurality of transistors being provided on the semiconductor layer,
- each of the plurality of transistors having a corresponding gate provided on a first surface of the semiconductor layer,
- the analog to digital conversion circuit being provided on the semiconductor layer,
- the sensing surface being provided on a second surface of the semiconductor layer, the second surface being opposite to the first surface.
Dependencies are inferred from the claim text.