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US 10,066,161 B2Granted
InP quantum dots with GaP and AlP shells and methods of producing the same
AssigneeNanosys, Inc.
InventorsJohn J. Curley, Chunming Wang
Life of this patent
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Abstract
Disclosed are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core of InP and shell layers of GaP and AlP. The nanostructures may have an additional shell layer. Also provided are methods of preparing the nanostructures, films comprising the nanostructure and devices comprising the nanostructures.
Claims20
A method of making a nanostructure comprising an InP core and a first GaP or AlP shell, comprising
- (a) contacting an InP core with MX3, wherein M=Al or Ga, and X=an anion, and a source of phosphide in a solvent to give an InP core surrounded by a first GaP or AlP shell;
- where the contacting is carried out in the absence of an acid.
A display device comprising:
- a layer that emits radiation;
- a film layer comprising a population of nanostructures comprising an InP core and a first GaP or AlP shell, disposed on the radiation emitting layer;
- an optically transparent barrier layer on the film layer;
- and
- an optical element, disposed on the barrier layer;
- wherein the film layer further comprises surfactants or ligands bonded to the optically transparent barrier layer.
3 more elements
Dependencies are inferred from the claim text.