Integrated circuit device with plating on lead interconnection point and method of forming the device
AssigneeSTMicroelectronics SDN BHD
InventorCheeyang Ng
Life of this patent
Estimating the term…
Abstract
An integrated circuit (IC) device includes an IC die and a plurality of leads. Each lead includes an unplated proximal end including a first material, and an unplated distal end including the first material. A plated bond wire portion extends between the proximal and distal ends and includes the first material and a plating of a second material thereon. A plurality of bond wires extend between the IC die and the plated bond wire portions of the leads. An encapsulation material surrounds the IC die and bond wires so that the unplated proximal end and plated bond wire portion of each lead are covered by the encapsulation material.
Claims29
An integrated circuit (IC) device comprising:
- an IC die;
- a plurality of leads, each lead having a continuous planar shape along a plane parallel to a major surface of the IC die, each lead being devoid of openings and recesses and comprising:
- a first material comprising a first major surface parallel to the plane;
- an unplated proximal end comprising the first material, the unplated proximal end comprising a first portion of the first major surface,
- an unplated distal end comprising the first material, and
- a bond wire portion between the unplated proximal end and the unplated distal end, wherein the bond wire portion comprises a plurality of plated regions disposed on a second portion of the first major surface, the plurality of plated regions comprising a second material plated on the second portion of the first major surface, wherein gaps between adjacent ones of the plurality of plated regions expose portions of the second portion of the first major surface;
- a plurality of bond wires, each bond wire extending between said IC die and the bond wire portion of a respective lead;
- and
- an encapsulation material surrounding said IC die and plurality of bond wires so that the unplated proximal end and bond wire portion of each lead are covered by said encapsulation material.
An integrated circuit (IC) device comprising:
- an IC die;
- a plurality of leads, each lead extending along a lead extension direction and having a continuous planar shape devoid of openings and recesses and comprising:
- an unplated proximal end comprising copper,
- an unplated distal end comprising copper, and
- a plated bond wire portion between the unplated proximal end and the unplated distal end and comprising copper and a silver plating thereon, wherein the length of the plated bond wire portion along the lead extension direction is more than double the length of the unplated proximal end along the lead extension direction;
- a plurality of bond wires, each bond wire extending between said IC die and the plated bond wire portion of a respective lead;
- and
- an encapsulation material surrounding said IC die and plurality of bond wires so that the unplated proximal end and plated bond wire portion of each lead are covered by said encapsulation material.
A method for making an integrated circuit (IC) device comprising:
- forming a plurality of leads, each lead extending along a lead extension direction and having a continuous planar shape devoid of openings and recesses and comprising:
- an unplated proximal end comprising a first material,
- an unplated distal end comprising the first material, and
- a plated bond wire portion between the unplated proximal end and the unplated distal end and comprising the first material and a plating of a second material thereon, wherein the length of the plated bond wire portion along the lead extension direction is more than double the length of the unplated proximal end along the lead extension direction;
- coupling a plurality of bond wires to an IC die and the plurality of leads so that each bond wire extends between the IC die and the plated bond wire portion of a respective lead;
- and
- forming an encapsulation material to surround the IC die and plurality of bond wires so that the unplated proximal end and plated bond wire portion of each lead are covered by the encapsulation material.
An integrated circuit (IC) device comprising:
- an IC die;
- a plurality of leads, each lead having a continuous planar shape along a plane parallel to a major surface of the IC die, each lead being devoid of openings and recesses and comprising:
- a first edge surface and an opposite second edge surface, the second edge surface facing the IC die and the first edge surface facing away from the IC die,
- a first portion comprising a first material and being un-plated, the first portion being disposed between the first edge surface and the second edge surface, the first portion comprising a first major surface parallel to the plane,
- a second portion comprising the first material and being un-plated, the second portion being disposed between the second edge surface and the first portion, the second portion comprising a second major surface parallel to the plane,
- a third portion comprising the first material and disposed between the first portion and the second portion, the third portion comprising a third major surface parallel to the plane, the third portion further comprising a first plating layer comprising a second material, wherein the third portion is spaced from the second edge surface by the second portion, and
- a fourth portion comprising the first material and disposed between the first portion and the third portion, the fourth portion comprising a fourth major surface parallel to the plane, the fourth portion further comprising a second plating layer comprising the second material;
- a plurality of bond wires, each bond wire extending between the IC die and the third portion of a respective lead;
- and
- an encapsulation material surrounding the IC die and the plurality of bond wires so that the second edge surface and the third portion of each lead are covered by the encapsulation material.
Dependencies are inferred from the claim text.