Electron device and method for manufacturing an electron device
AssigneeNanyang Technological University
InventorsSheel Aditya, Zhao Chen
Life of this patent
Estimating the term…
Abstract
According to embodiments of the present invention, an electron device is provided. The electron device includes a support substrate, a conductive planar slow-wave structure on the support substrate, the conductive planar slow-wave structure being adapted to receive an electromagnetic wave signal for interaction with an electron beam, and a dielectric layer arrangement in between the conductive planar slow-wave structure and the support substrate, the dielectric layer arrangement being arranged on the support substrate at only one or more support substrate portions overlapping with the conductive planar slow-wave structure. According to further embodiments of the present invention, a method for manufacturing an electron device is also provided.
Claims20
An electron device comprising:
- a support substrate;
- a conductive planar slow-wave structure on the support substrate, the conductive planar slow-wave structure being adapted to receive an electromagnetic wave signal for interaction with an electron beam;
- and
- a dielectric layer arrangement in between the conductive planar slow-wave structure and the support substrate, the dielectric layer arrangement being arranged on the support substrate only on one or more portions of the support substrate which are overlapped by the conductive planar slow-wave structure.
A method for manufacturing an electron device, the method comprising:
- providing a support substrate;
- forming a conductive planar slow-wave structure on the support substrate, the conductive planar slow-wave structure being adapted to receive an electromagnetic wave signal for interaction with an electron beam;
- and
- forming a dielectric layer arrangement in between the conductive planar slow-wave structure and the support substrate, the dielectric layer arrangement being arranged on the support substrate only on one or more portions of the support substrate which are overlapped by the conductive planar slow-wave structure.
Dependencies are inferred from the claim text.