Metal nitride material for thermistor, method for producing same, and film-type thermistor sensor
AssigneeMitsubishi Materials Corporation
InventorsToshiaki Fujita, Hiroshi Tanaka, Noriaki Nagatomo
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Abstract
A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: MxAly(N1-wOw)z (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70≤y/(x+y)≤0.98, 0.45≤z≤0.55, 0<w≤0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al alloy sputtering target (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni).
Claims6
A thermistor made of a metal nitride material, the metal nitride material consisting of a metal nitride represented by the general formula:
- MxAly(N1-wOw)z (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70≤y/(x+y)≤0.98, 0.45≤z≤0.55, 0<w≤0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.
Dependencies are inferred from the claim text.