Dual selective deposition

A method for selectively depositing two different materials on two different surfaces of a substrate, wherein a first surface is a surface comprising a metal or semiconductor material and a second surface comprises OH, NHx or SHx-terminations, the method comprising:

• selectively depositing a first material on the first surface of the substrate relative to the second surface comprising OH, NHx or SHx-terminations by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor and a second reactant;
• and
• selectively depositing a second material on the second surface comprising OH, NHx or SHx-terminations relative to the first surface by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor and a second reactant,
• wherein at least one of selectively depositing the first material and selectively depositing the second material is an atomic layer deposition (ALD) process,
• wherein the second surface comprises OH, NHx or SHx-terminations when the first material is selectively deposited.

A method for selectively depositing a first metallic material on a first metal or semiconductor surface of a substrate and a second dielectric material on a second surface of the same substrate, wherein the second surface comprises a surface of a material that is not conducting or semiconducting and comprises OH terminations, the method comprising:

• selectively depositing the first metallic material on the first surface of the substrate relative to the second surface comprising OH terminations by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor and a second reactant;
• and
• selectively depositing the second dielectric material on the second surface comprising OH terminations relative to the first surface by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor and a second reactant,
• wherein the second surface comprises OH terminations during the selectively depositing the first metallic material step.

A method for selectively depositing tungsten on a first surface of a substrate and antimony on a second different surface of the same substrate comprising OH, NHx or SHx-terminations, the method comprising:

• selectively depositing the tungsten on the first surface of the substrate relative to the second surface comprising OH, NHx or SHx-terminations by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first tungsten precursor and a second reactant;
• and
• selectively depositing the antimony on the second surface comprising OH, NHx or SHx-terminations relative to the first surface by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first antimony precursor and a second reactant,
• wherein the second surface comprises OH, NHx or SHx-terminations when the tungsten is selectively deposited.

A method for selectively depositing a material comprising nickel on a first surface of a substrate comprising OH, NHx or SHx-terminations and germanium oxide on a second surface different of the same substrate, the method comprising:

• selectively depositing the material comprising nickel on the first surface comprising OH, NHx or SHx-terminations relative to the second surface of the substrate by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first nickel precursor and a second reactant;
• and
• selectively depositing the germanium oxide on the second surface of the substrate relative to the first surface by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first germanium precursor and a second reactant,
• wherein the first surface comprises OH, NHx or SHx-terminations during the selectively depositing the material comprising nickel step.

A method for selectively depositing ruthenium on a first surface of a substrate and germanium oxide or silicon dioxide on a second surface of the same substrate comprising OH surface terminations, the method comprising:

• selectively depositing the ruthenium on the first surface of the substrate relative to the second surface comprising OH surface terminations by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor and a second reactant;
• and
• selectively depositing the germanium oxide or the silicon dioxide on the second surface comprising OH surface terminations relative to the first surface by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor and a second reactant,
• wherein the second surface comprises OH terminations when the ruthenium is selectively deposited.