Plasma activated conformal dielectric film deposition
AssigneeNovellus Systems, Inc.
InventorsShankar Swaminathan, Jon Henri, Dennis Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi Kattige, Bart van Schravendijk, Andrew J. McKerrow
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Abstract
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
Claims20
A method of depositing a film on a non-planar substrate surface in a reaction chamber, the method comprising:
- introducing a first reactant into the reaction chamber under non-plasma conditions allowing the first reactant to adsorb onto the non-planar substrate surface;
- introducing a second reactant into the reaction chamber to react with the adsorbed first reactant;
- introducing a dopant containing material into the reaction chamber;
- and
- forming a doped film conformal to the non-planar substrate surface.
A method of depositing a doped silicon oxide film on a non-planar substrate surface in a reaction chamber, the method comprising:
- introducing a silicon-containing first reactant into the reaction chamber under non-plasma conditions allowing the first reactant to adsorb onto the non-planar substrate surface;
- introducing an oxidant into the reaction chamber to react with the adsorbed first reactant;
- and
- introducing a dopant containing material into the reaction chamber to form a doped silicon oxide film conformal to the non-planar substrate surface.
A method of depositing a doped silicon nitride film on a non-planar substrate surface in a reaction chamber, the method comprising:
- introducing a silicon-containing first reactant into the reaction chamber under non-plasma conditions allowing the first reactant to adsorb onto the non-planar substrate surface;
- introducing a nitrogen-containing reactant into the reaction chamber to react with the adsorbed first reactant;
- and
- introducing a dopant containing material into the reaction chamber to form a doped silicon nitride film conformal to the non-planar substrate surface.
Dependencies are inferred from the claim text.