Extreme ultraviolet photoresist and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Hao Chen, Wei-Han Lai, Chien-Wei Wang, Chin-Hsiang Lin
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Abstract
The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer, a sensitizer, and a photo-acid generator (PAG), wherein the PAG includes a first phenyl ring and a second phenyl ring both chemically bonded to a sulfur, the first and second phenyl rings being further chemically bonded with enhanced sensitivity; performing an exposing process to the photoresist layer; and developing the photoresist layer, thereby forming a patterned photoresist layer.
Claims20
A method for lithography patterning, comprising:
- forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer, a sensitizer that includes a polyhydroxystyrene (PHS) chemical group, and a photo-acid generator (PAG), wherein the PAG includes a first phenyl ring and a second phenyl ring both chemically bonded to a sulfur, the first and second phenyl rings being further chemically bonded with enhanced sensitivity;
- performing an exposing process to the photoresist layer;
- and
- developing the photoresist layer, thereby forming a patterned photoresist layer.
A method for lithography patterning, comprising:
- forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer that includes a polyhydroxystyrene (PHS) polymer, a sensitizer that is bonded to the polymer, and a photo-acid generator (PAG), wherein the PAG includes a first phenyl ring and a sulfur chemically bonded together, wherein the sulfur is further chemically bonded to a first carbon and a second carbon that are chemically bonded together;
- performing an exposing process to the photoresist layer;
- and
- developing the photoresist layer, thereby forming a patterned photoresist layer.
A method for lithography patterning, comprising:
- forming a photoresist layer over a substrate, wherein the photoresist layer includes a polyhydroxystyrene (PHS) polymer;
- a sensitizer that includes a PHS chemical structure and is sensitive to an extreme ultraviolet (EUV) radiation and is able to generate an electron in response to the EUV radiation;
- and a photo-acid generator (PAG) that is able to generate an acid in response to the electron, wherein the PAG includes a first phenyl ring and a second phenyl ring both chemically bonded to a sulfur, the first and second phenyl rings being further chemically bonded with enhanced sensitivity;
- performing an exposing process to the photoresist layer to the EUV radiation;
- and
- developing the photoresist layer, thereby forming a patterned photoresist layer.
Dependencies are inferred from the claim text.