Power switching cell with normally conducting field-effect transistors

A power switching cell comprising:

• an input port capable of receiving a switching control signal which is referenced to a general ground of the cell, constituting a non-isolated control of the cell;
• a normally on field-effect power transistor having a drain capable of receiving a positive supply voltage that is defined with respect to a ground at zero reference potential in order to apply it to an output port, and a source connected to the output port;
• a self-biasing circuit for biasing a gate of the power transistor;
• and
• a current switch electrically connected between the self-biasing circuit and a negative or zero reference potential, a switching control input of which is connected to the input port, and configured so that, on activation by said switching control signal, said current switch electrically connects the negative or zero reference potential to the self-biasing circuit,
• wherein the self-biasing circuit comprises:
• a normally on field-effect transistor having a drain connected to the source of the power transistor and a source connected to the gate of the power transistor;
• a self-biasing resistor for biasing a gate of the transistor of the self-biasing circuit, which resistor is connected between the gate and the source of said self-biasing transistor;
• and in series between the current switch and the source of said self-biasing transistor.