Integrated circuits with magnetic tunnel junctions and methods for producing the same

An integrated circuit comprising:

• a magnetic tunnel junction comprising a fixed layer, a total free structure, and a barrier layer positioned between the fixed layer and the total free structure, wherein the total free structure comprises a first free layer, a second free layer, and a first spacer layer, wherein the first spacer layer is non-magnetic, wherein the first spacer layer is disposed between the first free layer and the second free layer, wherein at least one of the first free layer or the second free layer comprise a primary free layer alloy, wherein the primary free layer alloy comprises an alloy of cobalt, iron, boron, and a free layer additional element, wherein the free layer additional element is present at a concentration of from about 1 atomic percent to about 10 atomic percent, based on a total weight of the primary free layer alloy, and wherein the free layer additional element is selected from one or more of niobium (Nb) and hafnium (Hf).