Image transfer using EUV lithographic structure and double patterning process
AssigneeInternational Business Machines Corporation
InventorsHsueh-Chung Chen, Yann A. M. Mignot, Yongan Xu
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Abstract
An EUV lithographic structure includes an EUV photosensitive resist layer disposed on a hardmask layer, wherein the EUV lithographic structure is free of an antireflective coating. An organic adhesion layer can be provided between the hardmask layer and the EUV photosensitive resist layer. The hardmask layer can include an uppermost oxide hardmask layer, an intermediate hardmask layer, and a lowermost oxide hardmask layer, wherein the EUV photosensitive resist layer is disposed on the uppermost oxide hardmask layer. Also described are methods for patterning the EUV lithographic structures.
Claims4
An EUV lithographic structure comprising:
- an EUV photosensitive resist layer;
- and
- a multilayer hardmask layer comprising an uppermost oxide hardmask layer, an intermediate hardmask layer, and a lowermost oxide hardmask layer provided upon a substrate, wherein the EUV lithographic structure is free of an antireflective layer and the EUV photosensitive resist layer is deposited on and in direct contact with the multilayer hardmask layer.
Dependencies are inferred from the claim text.