Ultraviolet light emitting device
AssigneeIndustry Foundation of Chonnam National University
InventorsJunekey Lee, Hyokun Son
Life of this patent
Estimating the term…
Abstract
An ultraviolet light emitting device without the use of a p-type semiconductor layer is described. For generating ultraviolet light, an electron beam generator is provided, and an electron beam generated in the electron beam generator is guided to an active layer of an ultraviolet light generator. In the active layer, the electron beam is collided, and electron-hole pairs generated by the collisions are confined in well layers due to barrier layers of the active layer. The confined electrons and holes generate ultraviolet light through recombination.
Claims6
An ultraviolet light emitting device, comprising:
- an electron beam generator that generates an electron beam due to an applied voltage;
- and
- an ultraviolet light generator facing the electron beam generator with a separation space under vacuum,
- wherein the ultraviolet light generator comprises,
- a substrate,
- a n-type semiconductor layer formed on the substrate,
- an active layer having quantum well structure and formed on the n-type semiconductor layer, and generating ultraviolet light resulting from recombination of electron-hole pairs, and
- an anode formed on the n-type semiconductor layer for applying a voltage to the active layer,
- wherein the electron-hole pairs are generated by collision of the electron beam with the active layer,
- wherein the electron beam directly contacts the active layer.
Dependencies are inferred from the claim text.