Semiconductor package and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Hsi Wu, Der-Chyang Yeh, Hsien-Wei Chen, Jie Chen
Life of this patent
Estimating the term…
Abstract
An embodiment is a method including forming a first passive device in a first wafer, forming a first dielectric layer over a first side of the first wafer, forming a first plurality of bond pads in the first dielectric layer, planarizing the first dielectric layer and the first plurality of bond pads to level top surfaces of the first dielectric layer and the first plurality of bond pads with each other, hybrid bonding a first device die to the first dielectric layer and at least some of the first plurality of bond pads, and encapsulating the first device die in a first encapsulant.
Claims20
A structure comprising:
- a first substrate comprising a first passive device embedded in the first substrate;
- a first dielectric layer over a first side of the first substrate;
- a first plurality of bond pads in the first dielectric layer, a first surface of the first dielectric layer being level with first surfaces of the first plurality of bond pads;
- and
- a first die comprising:
- a second plurality of bond pads bonded to the first plurality of bond pads through metal-to-metal bonding;
- and
- a second plurality of dielectric layers comprising a second dielectric layer, with the second dielectric layer having a second surface level with second surfaces of the second plurality bond pads, the first dielectric layer being bonded to the second dielectric layer through dielectric-to-dielectric bonds.
A method comprising:
- forming a through via extending into a first wafer from a first side;
- forming a first passive device in the first wafer, the first passive device and the through via being formed in same processing steps;
- forming a first dielectric layer over the first side of the first wafer;
- forming a first plurality of bond pads in the first dielectric layer;
- planarizing the first dielectric layer and the first plurality of bond pads to level top surfaces of the first dielectric layer and the first plurality of bond pads with each other;
- forming a first electrical connector on one of the first plurality of bond pads;
- bonding a second plurality of bond pads of a first device die to at least some of the first plurality of bond pads;
- bonding a second dielectric layer of the first device die to the first dielectric layer;
- encapsulating the first device die and the first electrical connector in a first encapsulant;
- and
- singulating the encapsulant and the first wafer.
A method comprising:
- forming a first package comprising:
- forming a passive device and a through via in a first wafer, the passive device comprising a capacitor, a resistor, an inductor, or a combination thereof;
- forming a first redistribution structure over a first side of the first wafer, the first redistribution structure comprising a first plurality of bond pads in a first dielectric layer, top surfaces of the first plurality of bond pads level with a top surface of the first dielectric layer;
- forming a first electrical connector on one of the first plurality of bond pads;
- bonding a first device die to the first redistribution structure, a dielectric layer of the first device die being bonded to the first dielectric layer, and metal pads in the first device die being bonded to the first plurality of bond pads through metal-to-metal bonding;
- encapsulating the first device die in a first molding compound;
- and
- forming a second redistribution structure over the first device die, the first molding compound, and the first electrical connector, the second redistribution structure comprising metallization patterns in a second dielectric layer.
Dependencies are inferred from the claim text.