Hydrogen plasma based cleaning process for etch hardware
AssigneeApplied Materials, Inc.
InventorsChirantha Rodrigo, Jingchun Zhang, Lili Ji, Anchuan Wang, Nitin K. Ingle
Life of this patent
Estimating the term…
Abstract
The present disclosure provides methods for cleaning chamber components post substrate etching. In one example, a method for cleaning includes activating an etching gas mixture using a plasma to create an activated etching gas mixture, the etching gas mixture comprising hydrogen-containing precursor and a fluorine-containing precursor and delivering the activated etching gas mixture to a processing region of a process chamber, the process chamber having an edge ring positioned therein, the edge ring comprising a catalyst and anticatalytic material, wherein the activated gas removes the anticatalytic material from the edge ring.
Claims20
A cleaning method, comprising:
- activating an etching gas mixture using a plasma to create an activated etching gas mixture, the etching gas mixture comprising hydrogen-containing precursor and a fluorine-containing precursor;
- and
- delivering the activated etching gas mixture to a processing region of a process chamber, the process chamber having an edge ring positioned therein, the edge ring comprising a catalyst comprising nickel and anticatalytic material, wherein the activated gas removes the anticatalytic material from the edge ring.
A method for processing a substrate, comprising:
- etching a substrate positioned in a processing region of a process chamber, the substrate being positioned in conjunction with an edge ring comprising a catalyst comprising nickel, wherein etching the substrate deposits an anticatalytic material on the edge ring;
- removing the substrate from the processing region;
- forming a remote plasma using an etching gas mixture, the etching gas mixture comprising a hydrogen-containing precursor and a fluorine-containing precursor;
- and
- delivering the remote plasma to the edge ring in the processing region, wherein the remote plasma removes the anticatalytic material from the edge ring.
A device cleaning method, comprising:
- delivering a etching gas mixture to a plasma cavity of a process chamber, the process chamber having an edge ring, the edge ring comprising nickel and less than 5% titanium material;
- forming a remote plasma using an etching gas mixture, the etching gas mixture comprising H2 and NF3, the ratio of the concentration of H2 to NF3 being at least a 3:1 ratio, wherein the antecedent of the ratio determines the minimum value;
- and
- delivering the remote plasma from the plasma cavity to a processing region of the process chamber, wherein the remote plasma removes the titanium material from the edge ring.
Dependencies are inferred from the claim text.