System of architecture and related built-in nanomembranes for the emitter of a light-to-electricity all-silicon converter for the giant photoconversion and the method of its manufacture

A method of forming an architectural system defined within an emitter space of a semiconductor light-to-electricity converter, comprising the steps of:

• providing a front electrode;
• providing a rear electrode;
• providing a base portion disposed adjacent to said rear electrode;
• providing an emitter, comprising crystalline silicon (c-Si), disposed adjacent to said front electrode and having a front face portion;
• providing a PN junction interposed between said base portion and said emitter;
• and
• providing at least one layer of amorphized silicon (a-Si) nanograins comprising a plurality of horizontally separated amorphized silicon (a-Si) nanograins disposed within an upper region of said emitter so as to be close to said front face portion of said emitter, each one of said plurality of horizontally separated amorphized silicon (a-Si) nanograins having a predetermined vertically elongated geometrical configuration such that a relatively small upper surface area is disposed toward said front face of said emitter while a relatively large body surface area of each one of said amorphized silicon (a-Si) nanograins is disposed within said emitter, and wherein each one of said plurality of horizontally separated amorphized silicon (a-Si) nanograins is enveloped within a coating of metamaterial such that when said light-to-electricity converter is exposed to incident light, only a small part of the incident light is absorbed within the amorphized matter comprising said plurality of amorphized silicon (a-Si) nanograins as a result of only said relatively small upper surface area being exposed to incoming photons, while hot electrons, generated by energetic photons entering said emitter and moving in all directions within said emitter, will massively collide with said plurality of horizontally separated, vertically elongated amorphized silicon (a-Si) nanograins so as to result in vastly multiplied secondary electron generation.