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US 10,020,184 B2Granted
Method for cleaning substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Ping Hong, Yu-Cheng Liu
Life of this patent
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Abstract
A method for cleaning a substrate is provided. The method includes providing a substrate. Metal compound residues are formed over the substrate. The method includes exposing the substrate to an organic plasma to volatilize the metal compound residues. The organic plasma is generated from a gas. The gas includes an organic gas, and the organic gas is made of a hydrocarbon compound or an alcohol compound.
Claims20
A method for cleaning a substrate, comprising:
- providing a substrate;
- depositing an etch stop layer over the substrate, wherein the etch stop layer comprises a metal compound;
- depositing a dielectric layer over the etch stop layer;
- performing a plasma etching process to remove a first portion of the dielectric layer and a second portion of the etch stop layer, wherein metal compound residues are formed from the second portion and formed over at least one of the dielectric layer or the etch stop layer, the plasma etching process forms an opening in the dielectric layer and a recess in the etch stop layer, and the opening is over the recess;
- and
- exposing the substrate to an organic plasma to volatilize the metal compound residues, wherein the organic plasma removes the etch stop layer exposed by the opening.
3 more elements
A method for cleaning a substrate, comprising:
- providing a plasma processing apparatus comprising a housing, an upper electrode plate, a lower electrode pedestal, and a gas exhaust unit, wherein a plasma processing chamber is in the housing, the upper electrode plate and the lower electrode pedestal are in the plasma processing chamber, the housing has a gas outlet, and the gas exhaust unit is connected to the gas outlet;
- providing a substrate in the plasma processing chamber and over the lower electrode pedestal;
- forming a metal compound layer over the substrate;
- performing a plasma etching process to remove a portion of the metal compound layer, wherein during the plasma etching process, metal compound residues are formed over the substrate;
- exposing the substrate to an organic plasma to volatilize the metal compound residues into a gaseous metal compound;
- and
- exhausting the gaseous metal compound from the plasma processing chamber using the gas exhaust unit.
4 more elements
A method for cleaning a substrate, comprising:
- forming a metal compound layer over a substrate;
- performing a plasma etching process to remove a portion of the metal compound layer, wherein during the plasma etching process, metal compound residues are formed over the metal compound layer;
- and
- exposing the metal compound layer to an organic plasma to volatilize the metal compound residues into a gaseous metal compound.
1 more element
Dependencies are inferred from the claim text.