# US 10,014,445 B2 · Light-emitting device and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,014,445 B2 - Document ID: US10014445B2 - Status: Granted - Kind: B2 - Application number: 15/405,548 - Filed: 2017-01-13 - Published: 2017-07-13 - Granted: 2018-07-03 - Earliest claimed: 2016-01-13 - Assignees: Epistar Corporation - Applicants: Epistar Corporation - Inventors: Jar-Yu Wu; Chun-Lung Tseng; Ching-Hsing Shen; Wei-Ting Cheng; Jui-Fen Chien; Yu-Ming Kung; Chiao-Yao Cheng - Web page: https://patentgrep.com/patent/US10014445B2 ## CPC - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/01: Manufacture or treatment - H10H 20/833: Transparent materials - H10H 20/835: {Reflective materials} - H10H 20/855: Optical field-shaping means, e.g. lenses - H10H 20/032: {of electrodes} - H10H 20/034: {of coatings} - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A manufacturing method of a light-emitting device is disclosed. The method includes: providing a semiconductor wafer, including a substrate having a first surface and a second surface opposite to the first surface; and a semiconductor stack on the first surface; removing a portion of the semiconductor stack to form an exposed region; forming a first reflective structure on the exposed region; and providing a radiation on the second surface corresponding to a position of the first reflective structure. ## Claims ### Claim 1 A light-emitting device, comprising: a substrate; a light-emitting stack on the substrate, comprising: a first semiconductor layer; a second semiconductor layer; and an active layer formed between the first semiconductor layer and the second semiconductor layer; a peripheral region surrounding the active layer and the second semiconductor layer; and a first reflective structure formed on the peripheral region and surrounding the active layer. ### Claim 2 (depends on 1) The light-emitting device of claim 1, further comprising: a second electrode on the second semiconductor layer; and a second reflective structure disposed between the second electrode and the second semiconductor layer; wherein the first reflective structure and the second reflective structure have the same dielectric stacks, and the dielectric stacks are formed by a plurality of pairs of dielectric layers having different refractive indexes alternately laminated. ### Claim 3 (depends on 2) The light-emitting device of claim 2, wherein the second reflective structure comprises a patterned structure. ### Claim 4 (depends on 1) The light-emitting device of claim 1, wherein the first reflective structure comprises a dielectric stack, and the dielectric stack is formed by a plurality of dielectric layers with different refractive indexes alternately laminated. ### Claim 5 (depends on 1) The light-emitting device of claim 1, wherein the first reflective structure is capable of reflecting the radiation. ### Claim 6 (depends on 1) The light-emitting device of claim 1, wherein the peripheral region comprises an exposed surface of the first semiconductor layer, and the first reflective structure is formed on the exposed surface of the first semiconductor layer. ### Claim 7 (depends on 6) The light-emitting device of claim 6, wherein the first reflective structure comprises a patterned structure. ### Claim 8 (depends on 7) The light-emitting device of claim 7, wherein the surface of the first semiconductor layer in the peripheral region comprises light guiding structures. ### Claim 9 (depends on 1) The light-emitting device of claim 1, further comprising: one or more light-emitting stacks on the substrate to form a plurality of the light-emitting stacks; wherein the peripheral region comprises an exposed surface of the substrate at a peripheral of the substrate where the light-emitting stack are not provided thereon, and the peripheral region surrounds the first semiconductor layers, the active layers, and the second semiconductor layers of the plurality of the light-emitting stacks; and the first reflective structure is formed on the exposed surface of the substrate. ### Claim 10 (depends on 9) The light-emitting device of claim 9, wherein the first reflective structure has a patterned structure and/or the first reflective structure is formed between any two light-emitting stacks of the plurality of light-emitting stacks. ### Claim 11 A light-emitting device, comprising: a substrate; a light-emitting stack on the substrate, comprising: a first semiconductor layer; a second semiconductor layer; and an active layer formed between the first semiconductor layer and the second semiconductor layer; a peripheral region surrounding the light-emitting stack and comprising an exposed surface of the substrate; and a first reflective structure formed directly on the exposed surface of the substrate where the light-emitting stack is not formed thereon. ### Claim 12 (depends on 11) The light-emitting device of claim 11, further comprising: a second electrode on the second semiconductor layer; and a second reflective structure disposed between the second electrode and the second semiconductor layer; wherein the first reflective structure and the second reflective structure have the same dielectric stacks, and the dielectric stacks are formed by a plurality of pairs of dielectric layers having different refractive indexes alternately laminated. ### Claim 13 (depends on 12) The light-emitting device of claim 12, wherein the second reflective structure comprises a patterned structure. ### Claim 14 (depends on 11) The light-emitting device of claim 11, wherein the first reflective structure comprises a dielectric stack, and the dielectric stack is formed by a plurality of dielectric layers with different refractive indexes alternately laminated. ### Claim 15 (depends on 11) The light-emitting device of claim 11, wherein the first reflective structure is capable of reflecting the radiation. ### Claim 16 (depends on 11) The light-emitting device of claim 11, wherein the first reflective structure surrounds the light-emitting stack. ### Claim 17 (depends on 11) The light-emitting device of claim 11, further comprising: one or more light-emitting stacks on the substrate to form a plurality of the light-emitting stacks; wherein the first reflective structure comprises a patterned structure and/or the first reflective structure is formed between two of the light-emitting stacks. ### Claim 18 (depends on 17) The light-emitting device of claim 17, wherein two of the light-emitting stacks where the first reflective structure is formed between are electrically serially connected by an electrical connection. ### Claim 19 (depends on 18) The light-emitting device of claim 18, wherein the first reflective structure is under the electrical connection. ### Claim 20 (depends on 11) The light-emitting device of claim 11, wherein the first reflective structure comprises a patterned structure.