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US 10,008,736 B2Granted
Method for forming and processing antiperovskite material doped with aluminum material
AssigneeQuantumScape Corporation
InventorsAdrian Winoto, Anna Choi, Joseph Han, Will Hudson, Tim Holme, Cheng Chieh Chao
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Abstract
The present invention is related to formation and processing of antiperovskite material. In various embodiments, a thin film of aluminum doped antiperovskite is deposited on a substrate, which can be an electrolyte material of a lithium-based electrochemical storage device.
Claims5
A solid electrolyte for a solid-state lithium ion or lithium metal cell, the solid electrolyte comprising:
- an antiperovskite having the formula Li3-nR1-z/2XzHn
- where R is O, S, Se, or Te and X is a halide;
- wherein the antiperovskite has a lithium ion conductivity of at least about 1×10−5 S/cm at room temperature;
- wherein subscript n is from greater than 0 to less than or equal to 2;
- wherein subscript z is greater than 0.8;
- and
- wherein the lithium deficient variant of an antiperovskite has a lithium ion conductivity, σi, that is at least about 107 times greater than its electronic conductivity, σe.
4 more elements
Dependencies are inferred from the claim text.