Manufacturing method of semiconductor device and semiconductor manufacturing apparatus
AssigneeToshiba Memory Corporation
InventorsYukiteru Matsui, Kyoichi Suguro, Akifumi Gawase, Takahiko Kawasaki
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Abstract
A manufacturing method of a semiconductor device according to an embodiment implants impurities into a central portion of a polishing target film or an outer peripheral portion of the central portion of the polishing target film to cause an impurity concentration in the outer peripheral portion of the polishing target film and an impurity concentration in the central portion thereof to be different from each other, thereby modifying a surface of the polishing target film. The modified surface of the polishing target film is polished by a CMP method.
Claims12
A manufacturing method of a semiconductor device, the method comprising:
- implanting ions of C or Si serving as impurities into an outer peripheral portion of the polishing target film to cause an impurity concentration of ions of C or Si to be larger than an impurity concentration of ions of F, B, P, or N in the outer peripheral portion, so as to modify a surface of the polishing target film;
- thermally treating the polishing target film at a temperature equal to or higher than 900 degrees Celsius after the implantation of the ions of C or Si and before a polishing of the polishing target film;
- polishing the modified surface of the polishing target film by a CMP method, and
- implanting ions of F, B, P, or N serving as impurities into the central portion of the polishing target film to cause an impurity concentration of ions of F, B, P, or N to be larger than an impurity concentration of ions of C or Si in the central portion after the thermally treatment and before the polish.
A manufacturing method of a semiconductor device, the method comprising:
- implanting ions of N serving as impurities into an outer peripheral portion of the polishing target film to cause an impurity concentration of ions of N to be larger than an impurity concentration of ions of F, B, or P in the outer peripheral portion, so as to modify a surface of the polishing target film;
- thermally treating the polishing target film at a temperature equal to or higher than 900 degrees Celsius after the implantation of the ions of N and before a polishing of the polishing target film;
- polishing the modified surface of the polishing target film by a CMP method;
- and
- implanting ions of F, B or P serving as impurities into the central portion of the polishing target film to cause an impurity concentration of ions of F, B or P to be larger than an impurity concentration of ions of N in the central portion after the thermally treatment and before the polish.
A manufacturing method of a semiconductor device, the method comprising:
- implanting ions of N into an outer peripheral portion of a polishing target film using one of the ion beam masks;
- thermally treating the polishing target film at a temperature equal to or higher than 900 degrees after implanting the ions N into the outer peripheral portion;
- implanting ions of F, B, P, or N into the central portion of the polishing target film using another one of the ion beam masks after the thermal treatment;
- and
- polishing the surface of the polishing target film by a CMP method after the implantation of the ions of F, B, P, or N.
Dependencies are inferred from the claim text.